substrate temperature

Single crystal MgO has good thermal stability, light transmittance, electrical insulativity, chemical stability and mechanical properties. It is mainly used as substrate for high temperature superconductor ( HTS) thin films and also a kind of important optical material.

单晶MgO在耐温性、透光率、热导率、电绝缘性、化学稳定性和机械强度等方面性能优异，被广泛用作高温超导等薄膜生长的基片材料，同时也是一种重要的光学材料。

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The effect of substrate temperature on the accumulation of disorder is substantial.

衬底温度对于无序区积累的影响是很显著的.

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When the temperature of substrate was at the range of 380 ℃ to 470 ℃, the thin films had atomically smooth.

从不同基片温度的超晶格薄膜的AFM分析表明，在基片温度为380℃到470℃的温度范围内，薄膜具有原子级光滑表面。

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TiN thin film with ( 002) preferred orientation was grown by the DC magnetron sputtering at the condition of pure N_2 reacting gas, 1.6 A of the current of DC sputtering and 500 ℃ of the substrate temperature.

应用直流磁控溅射方法，在500℃的衬底温度、纯氮气的溅射气体、800w溅射功率的条件下制备出（002）择优取向的TiN薄膜。

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It is found that the temperature gradient of solidifying front edge could be reduced by reducing focused lamp intensity and increasing substrate temperature.

发现适当降低聚焦加热灯强度、提高衬底加热温度可以降低固化前沿温度梯度，从而降低亚晶界等缺陷密度。

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The splashing did not occur in the higher substrate temperature range (> 573 K) and the splat morphology changed to a disk type.

当衬底温度较高时（>573K），溅射不再发生，熔滴的扁平粒子呈现规则的圆盘状；

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As substrate temperature continuing rising, sp~ 3 bond proportion gradually decrease.

随着基底温度的继续增加，sp~3键含量逐渐下降。

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The effects of substrate temperature and Na contents in target on properties of ZnO thins films were studied by XRD, SEM and Hall.

通过XRD、SEM和Hall等测试手段研究了衬底温度和靶材中Na含量对ZnO薄膜性能的影响。

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ITO films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature.

低电阻率的ITO膜可以通过提高沉积时的衬底温度或高温退火来获得。

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The substrate temperature has great influence on the properties of both the SiO_2 films and the SiO_2/ Si interface. The fixed charge density of the SiO_2-Si system is estimated from the C-V curve, the minimum value is about 1.73 × 10 10 cm-2.

SiO2薄膜中固定氧化物电荷密度受衬底温度影响较大，其最小值可达1.73×1010cm-2。

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The methane concentration and the substrate temperature were studied.

着重研究了甲烷浓度、基体温度等工艺参数对热丝CVD法金刚石薄膜显微结构与性能的影响。

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Finally HALL doping test on the material and substrate temperature were optimized.

最后用3ALL测试对材料的掺杂和衬底温度进行了优化。

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Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.

对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。

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The properties of ZnO film are strongly dependent on preparation techniques which include substrate temperature, oxygen partial pressures ( OPP), annealing process.

ZnO薄膜的光电学性质强烈依赖于其制备的工艺条件，如：基片温度、氧分压以及退火处理等。

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Results show that SiN films with a low hydrogen content can be prepared by HWP CVD at a higher rate and lower substrate temperature, and the main bond mode in the deposited SiN films is Si& N stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

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The transmittance and reflectivity in the visible region of these films lowed with the increasing of the substrate temperature.

在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。

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It can be used as an insulating layer in static electrical micromotor. Influence of the processing parameters, such as substrate temperature, reactant gas ratio and deposition time, on the electrical resistivity and breakdown properties of Si_3N_4 thin films are studied.

通过改变沉积温度、反应气体比、沉淀时间等因素，系统研究了这些沉积工艺参数对Si3N4膜绝缘耐压性能的影响。

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The temperature difference between the thermal conductor and the glass substrate was also studied.

此外对石墨导热体和置于其上的玻璃基片两者之间的温度差别做了初步研究。

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As substrate temperature rises, islands coalesce and grow into larger ones on the surface.

AFM分析表明，薄膜为岛状生长，随温度升高，表面生长岛尺寸增大，岛密度变小。

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If the substrate temperature Ts is low ( 750 ℃-820 ℃), the nucleation density on the SiO2 Mask area is much smaller than that on th Si surface.

Ts较低时（750&820℃），PETEOS氧化硅区域成核密度远小于裸露硅表面；

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In addition, the optical loss increases with substrate temperature rising.

此外，随着基板温度的提高，损耗也会有所增加。

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Finally, the channel-structured glass substrate was sealed to a cover glass plate by using room temperature bonding technique.

最后，采用室温键合技术，将带有微纳结构的基片与盖片封合成玻璃微-纳流控复合芯片。

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The Ft thin film temperature Sensor design. technological process. Pt-film, Substrate and packaging material and their relationship have been discussed.

本文讨论了铂薄膜温度传感器的设计、制造工艺、膜料与衬底及封装材料的关系。

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Then it is printed onto a high-alumina ceramics substrate by silk screen print method. A superconducting wire of thickness in the range of 20~ 30 μ m, and zero resistance temperature 82 K, was successfully obtained.

用丝网印刷-烧结工艺，在高铝陶瓷基板上制得了厚约20～30μm，零电阻温度82K的厚膜超导电带。

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Aluminum-doped zinc oxide ( ZnO ∶ Al) films are deposited on Corning 1737 glass by RF magnetron sputtering under the substrate temperature of 250 ℃, RF power of 100W and pure argon gas.

在Corning1737玻璃衬底上射频磁控溅射沉积了铝掺杂ZnO薄膜（ZnO∶Al）.薄膜沉积在衬底温度250℃、溅射功率100W和纯氩气氛中进行。

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Effect of the Substrate Temperature on the Formation of SOI Materials by O Ion Implantation

基片温度对氧离子注入硅形成SOI材料的影响

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Coating and the substrate surface temperature of the coating would have a bad contraction stress, caused by cracking and peeling off the coating.

涂层与基体表面的温度差会使涂层产生收缩应力，引起涂层开裂和剥落。

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In a resistance thermal vacuum evaporator with a special heater ( coolant) holder, which can control the sample substrate temperature, Au and In 2O 3 films were deposited on glass slides by a thermal and an activated reactive evaporation technique, respectively.

用带特殊热（冷）阱的可控制基片温度的电阻加热式真空蒸镀薄膜装置，把吸收透明导电薄膜Au和In2O3分别通过热蒸镀和活化反应淀积在玻璃基片上。

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A cerium dioxide target was used for sputtering and films were deposited at various substrate temperature under different sputtering power.

溅射过程中，首先制备纯二氧化铈靶材，然后在不同的功率上调节不同的基片温度进行溅射。

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The effects of substrate temperature, reaction gas pressure, and RF power on the structural and optical properties of the prepared films are studied. Their optimal values are 700 ℃, 2 × 133Pa and 200W, respectively.

实验结果表明，衬底温度、反应气压及射频功率对金刚石膜的结晶习性、表面粗糙度及光透过率均有很大程度的影响，其最佳值分别为700℃，2×133Pa和200W。

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